Electrical properties of a W-B-N Schottky contact to GaAs
作者:
Yong Tae Kim,
Chang Woo Lee,
Dong Joon Kim,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 12
页码: 1507-1509
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121041
出版商: AIP
数据来源: AIP
摘要:
We have achieved the highest barrier height (0.90 eV) with a Schottky contact scheme of W-B-N/GaAs after rapid thermal annealing (RTA) at 700 °C, and even after the RTA at 900 °C, its barrier height (0.77 eV) is relatively higher than those of W (0.55 eV) and W-N/GaAs Schottky contacts (0.68 eV). Deep level transient spectroscopy and carrier density profile measurements show that the higher barrier height and lower leakage current of the W-B-N/GaAs diode are due to the W-B-N film that suppresses changes of the surface carrier and EL2 trap concentrations after the RTA. ©1998 American Institute of Physics.
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