Silicon dioxide thin films have been grown by the technique of photochemical‐vapor deposition. Deposition was performed using direct dissociation of oxygen by an ultraviolet arc lamp in the presence of silane. The films were deposited for a temperature range of 150 and 350 °C. Deposition rates peaked at a total pressure of 2 Torr, with a rate of 23 nm/min and 68 nm/min at 150 °C and 250 °C, respectively. Film stress is compressive with 1.04±0.14×109dynes/cm2. Dielectric constant (εox) and breakdown voltage (VB) were measured as 3.6 and 3.2 MV/cm, respectively. Etch rate in a room temperature 1:5 buffered hydrofluoric acid:deionized water solution was below 50 Å/s. The films have promise for application in integrated circuit devices.