InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
作者:
Shuji Nakamura,
Masayuki Senoh,
Shin-ichi Nagahama,
Naruhito Iwasa,
Takao Yamada,
Toshio Matsushita,
Hiroyuki Kiyoku,
Yasunobu Sugimoto,
Tokuya Kozaki,
Hitoshi Umemoto,
Masahiko Sano,
Kazuyuki Chocho,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 6
页码: 832-834
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122016
出版商: AIP
数据来源: AIP
摘要:
After obtaining an epitaxially laterally overgrown GaN on sapphire by the metalorganic chemical vapor deposition method, GaN growth was continued up to a thickness of 200 &mgr;m by a hydride vapor phase epitaxy method. The InGaN multi-quantum-well-structure laser diode (LD) was grown on a free-standing GaN substrate, which was obtained by removing the sapphire substrate. The LDs with cleaved mirror facets showed an output power as high as 160 mW under room-temperature continuous-wave (CW) operation. The fundamental transverse mode was observed up to an output power of 80 mW. The lifetime of the LDs at a constant output power of 5 mW was about 180 h under CW operation at an ambient temperature of 50 °C, due to a high threshold current density of 14 kA/cm2. ©1998 American Institute of Physics.
点击下载:
PDF
(109KB)
返 回