Reduced damage reactive ion etching process for fabrication of InGaAsP/InGaAs multiple quantum well ridge waveguide lasers
作者:
B. C. Qiu,
B. S. Ooi,
A. C. Bryce,
S. E. Hicks,
C. D. W. Wilkinson,
R. M. De La Rue,
J. H. Marsh,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 4
页码: 1818-1822
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590093
出版商: American Vacuum Society
关键词: (In,Ga)(As,P)
数据来源: AIP
摘要:
The damage introduced into an InGaAs/InGaAsP quantum well structure duringCH4/H2reactive ion etching (RIE) processes was measured, for plasma powers from 20 to 100 W, using low temperature photoluminescence. The damage depth profile is estimated to be around 12–70 nm after annealing at500 °Cfor 60 s using a rapid thermal annealer. A reduced damage RIE process has been developed to fabricate InGaAs/InGaAsP multiquantum well ridge waveguide lasers. The performance of these lasers has been compared to that of lasers fabricated from the same epilayer using wet etching to form the ridge. The resultant threshold currents were essentially indistinguishable, being 44.5 and 43 mA, respectively, for dry and wet etched lasers with500 μmlong laser cavities.
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