Water vapor controlling selective reactive ion etching of SiO2/Si in NF3plasma
作者:
M. Konuma,
E. Bauser,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 3
页码: 1575-1578
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.354830
出版商: AIP
数据来源: AIP
摘要:
Water vapor added to NF3plasma during reactive ion etching controls the ratio of the etch rates of SiO2and Si. Selectivity rises from a value of 0.14 at water‐free 100% NF3to 1.99 for an initial gas composition of 35% H2O‐65% NF3. The results of mass and energy analysis of the plasma yield a basis for discussing the mechanisms which effect the selectivity. The NF3/H2O plasma removes native oxides from Si surfaces.
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