An XeCl excimer laser was used to grow thin polycrystalline films of the ternary alloy semiconductor, ZnSexTe1−x, on sodium‐free glass substrates. The laser ablation/evaporation process has produced films spanning the entire compositional range withxvalues close to those of the original target. At a typical growth temperature of 300 °C, the grains possess orientations which vary from a predominant 〈111〉 for ZnTe to 〈311〉 for ZnSe with an increasing fraction of 〈311〉 as the ZnSe fraction increases. X‐ray diffraction shows that the alloy lattice constant increases linearly with thexvalue, absorption measurements show band bowing similar to that observed in bulk single crystals, and Raman studies show that the lattice dynamics are characteristic of single‐vibrational‐mode behavior over the entire alloy range.