On the possibility of transistor action based on quantum interference phenomena
作者:
Fernando Sols,
M. Macucci,
U. Ravaioli,
Karl Hess,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 4
页码: 350-352
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.100966
出版商: AIP
数据来源: AIP
摘要:
A theoretical study of quantum interference phenomena in a T‐shaped semiconductor structure is presented. Transmission and reflection coefficients are computed by use of a tight‐binding Green function technique. As expected, the results resemble the well‐known solutions for the electromagnetic field in waveguides with the main difference that the penetration of the wave function of the electrons can be controlled by external voltages. We conclude that transistor action based on quantum interference should be observable in such structures, and we present general results for the functional dependences of the transmission coefficient which corresponds to a transconductance.
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