Angular‐resolved photoemission and low energy electron loss spectroscopy (LELS) measurements are reported on GaAs(110) surfaces with adsorbed In, N, P, and As. It is shown that the photoemission from the ’’As dangling bond’’ surface state vanished after In adsorption, whereas the surface photoemission is unaffected by deposition of N, P, or As. This result is confirmed by tight‐binding‐type surface band structure calculations for models with a relaxed GaAs surface on which adsorbed In is assumed to be bound to the surface As atoms and N, P, or As to the Ga. However, some other observations like the surface Fermi level position and the behavior of the Ga 3dexciton peak in the LELS spectrum cannot be understood from this model.