Island growth, strain, and interdiffusion in InAs1−xPx/InP heterostructures
作者:
D. J. Tweet,
H. Matsuhata,
R. Shioda,
H. Oyanagi,
H. Kamei,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 9
页码: 1286-1288
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114399
出版商: AIP
数据来源: AIP
摘要:
Using x‐ray diffraction and transmission electron microscopy we have found that InAs1−xPxfilms deposited on InP(001) substrates with organometallic vapor phase epitaxy grow in an unusual island growth mode characterized by large strain‐dependent interdiffusion. Initially, strong intermixing occurs, producing pseudomorphic islands of intermediate composition. These grow only until some point in the relaxation process, possibly a critical value of the strain, after which islands of the intended composition begin to appear. Furthermore, both types of islands are found to penetrate deeply into the substrate. ©1995 American Institute of Physics.
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