The crystalline quality of Ge grown epitaxially on Si can be improved by using GeH4/H2gas low‐pressure chemical vapor deposition at a low temperature of 410 °C and surface‐cleaning processing with a purified‐H2flow prior to GeH4introduction into a CVD reactor. H2flow processing is carried out at growth temperature. The dislocation density of a 1.3‐μm thick Ge film is nearly 2×108cm−2, which is as low as that of molecular‐beam epitaxy (MBE)‐grown Ge films. Stacking faults commonly generated in the CVD‐grown Ge films at temperatures higher than 700 °C are not observed. The 700 °C heat treatment of the Ge film reduces dislocation density to 2×107cm−2and causes no interface reaction between Ge and Si. This technique is superior to conventional chemical vapor deposition (CVD) techniques for Ge epitaxial growth.