Boron channeling implantations in silicon: Modeling of electronic stopping and damage accumulation
作者:
G. Hobler,
A. Simionescu,
L. Palmetshofer,
C. Tian,
G. Stingeder,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 8
页码: 3697-3703
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.358608
出版商: AIP
数据来源: AIP
摘要:
Channeling implantations of 20 keV boron into silicon have been performed with doses between 1013and 1016cm−2in the [100], [110], and [211] direction, and parallel to a (111) plane. Simulations using an empirical electronic stopping model agree very well with the experimental results. The model has been obtained considering a large number of random and channeling implantations published in the literature. It contains a nonlocal and an impact parameter dependent part with the nonlocal fraction increasing with energy. Moreover, a computationally efficient damage accumulation model is presented which takes point defect recombination into account. It is found that due to interactions within a recoil cascade only 1/8 of the generated damage is stable, and that damage saturation takes place at a concentration of 4×1021cm−3. Comparison of simulations and experiments indicates that displaced atoms reside on random positions rather than on tetrahedral interstitial sites in the silicon lattice. ©1995 American Institute of Physics.
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