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Tuning of the Schottky barrier height using bi‐metallic layered structures

 

作者: Chandrika Narayan,   A. S. Karakashian,   G. H. R. Kegel,   Z. Rivera,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 59, issue 20  

页码: 2541-2542

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.105946

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Bi‐metallic Schottky contacts of Cr‐Al onp‐type Si using a layered structure have been investigated. In these contacts, the thickness of the inner layer in contact with Si was varied, while that of the outer metal layer was kept constant. Our studies indicate that the barrier height changes with the thickness of the inner metal layer. Furthermore, the morphology of our samples was examined with a transmission electron microscope (TEM) which indicates the presence of inhomogeneous mixing of Cr and Al.

 

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