Tuning of the Schottky barrier height using bi‐metallic layered structures
作者:
Chandrika Narayan,
A. S. Karakashian,
G. H. R. Kegel,
Z. Rivera,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 20
页码: 2541-2542
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105946
出版商: AIP
数据来源: AIP
摘要:
Bi‐metallic Schottky contacts of Cr‐Al onp‐type Si using a layered structure have been investigated. In these contacts, the thickness of the inner layer in contact with Si was varied, while that of the outer metal layer was kept constant. Our studies indicate that the barrier height changes with the thickness of the inner metal layer. Furthermore, the morphology of our samples was examined with a transmission electron microscope (TEM) which indicates the presence of inhomogeneous mixing of Cr and Al.
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