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High‐gain photorefractive two‐beam coupling in semi‐insulating GaAs with pump‐controlled suppression of the Schottky barrier

 

作者: Doron Chomsky,   Shmuel Sternklar,   Arie Zigler,   Steven Jackel,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 57, issue 5  

页码: 422-424

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103654

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Suppression of the Schottky barrier effect in semi‐insulating GaAs is demonstrated by centering the pump irradiation on the reverse bias crystal‐electrode interface. A photorefractive gain coefficient &Ggr; of 2.7 cm−1is achieved. The irradiation suppression overcomes the need for externally applied ohmic contacts.

 

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