The third subband population in modulation-doped InGaAs/InAlAs heterostructures
作者:
Hanxuan Li,
Zhanguo Wang,
Jiben Liang,
Bo Xu,
Ju Wu,
Qian Gong,
Chao Jiang,
Fengqi Liu,
Wei Zhou,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 12
页码: 6107-6109
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366482
出版商: AIP
数据来源: AIP
摘要:
We have observed the population of the third(n=3)two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures with very dense sheet carrier density by means of Fourier transform photoluminescence (PL). Three well-resolved PL peaks centered at 0.737, 0.908, and 0.980 eV are observed, which are attributed to the recombination transitions from the lowest three electron subbands to then=1heavy-hole subband. The subband separations clearly exhibit the features of the stepped quantum well with triangle and square potential, consistent with numerical calculation. Thanks to the presence of the Fermi cutoff, the population ratio of these three subbands can be estimated. Temperature and excitation intensity dependence of the quantum well luminescence intensity is also analyzed. ©1997 American Institute of Physics.
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