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Thermal activation energy of manganese acceptors in gallium arsenide as a function of impurity spacing

 

作者: J. S. Blakemore,   Winfield J. Brown,   Merrill L. Stass,   Dustin A. Woodbury,  

 

期刊: Journal of Applied Physics  （AIP Available online 1973）
卷期: Volume 44, issue 7  

页码: 3352-3354

 

ISSN:0021-8979

 

年代: 1973

 

DOI:10.1063/1.1662760

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The thermal ionization energy for Mn acceptors in GaAs decreases with increasing density of either Mn atoms or compensators. Measurements of the correlation ofEawithNaorNdare complicated by impurity inhomogeneity. Envelope functions fitted to the data show the same energy (0.11 eV) for the infinite dilution asymptotic value as is found for the optical activation threshold.

 

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