The growth ofc‐axis oriented Y1Ba2Cu3Oxthin films on an amorphous buffer layer of Y‐ZrO2, deposited on sapphire substrates, was investigated. Both films were grown by a pulsed laser deposition technique. A strong correlation was observed between the properties of Y1Ba2Cu3Oxand the thickness of the buffer layer. ATcof 89 K was obtained for an optimal buffer layer thickness of 9 nm. A model that adequately describes the film growth process was developed. A multilayer system of Y1Ba2Cu3Oxand amorphous Y‐ZrO2was grown and aTcof 87 K for the upperc‐axis oriented layer was measured.