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Photoelectron spectroscopy from atomic layer epitaxially grown ZnTe/ZnSe heterostructures

 

作者: P. Link,   G. Grobbel,   M. Wörz,   S. Bauer,   H. Berger,   W. Gebhardt,   J. J. Paggel,   K. Horn,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1995）
卷期: Volume 13, issue 1  

页码: 11-16

 

ISSN:0734-2101

 

年代: 1995

 

DOI:10.1116/1.579423

 

出版商: American Vacuum Society

 

关键词: ZINC TELLURIDES;ZINC SELENIDES;HETEROSTRUCTURES;EPITAXIAL LAYERS;SYNCHROTRON RADIATION;PHOTOELECTRON SPECTROSCOPY;EV RANGE 10−100;ELECTRONIC STRUCTURE;CORE LEVELS;VALENCE BANDS;LATTICE RELAXATION;ZnTe;ZnSe

 

数据来源: AIP

 

摘要:

Photoelectron spectra have been taken from ZnTe/ZnSe and ZnSe/ZnTe heterostructures growninsituby atomic layer epitaxy. Synchrotron radiation within the photon energy range of 70–80 eV was used for excitation. The extent of the interface region was determined by an analysis of the Te 4dand Se 3dcore‐level shifts. The valence‐band offset was determined as a function of layer thickness. After a critical thickness is reached the lattice relaxes and the valence‐band offset becomes +0.50±0.05 eV for ZnTe/ZnSe and −0.55±0.05 eV for ZnSe/ZnTe. Obviously the commutativity rule is well fulfilled within the limits of the experiment.

 

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