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Photoemissive scanning microscopy of doped regions on semiconductor surfaces

 

作者: B. Quiniou,   R. Scarmozzino,   Z. Wu,   R. M. Osgood,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 5  

页码: 481-483

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101859

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Photoelectric emission induced by a focused UV laser beam (&lgr;=257 nm) has been used to probe semiconductor surfaces. It was possible to distinguish between regions of different doping levels on a silicon surface. The spatial resolution was found to be limited only by the laser beam spot size.

 

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