首页   按字顺浏览 期刊浏览 卷期浏览 Electrical Properties of Selenium. III. Microcrystalline Selenium Metal Doped
Electrical Properties of Selenium. III. Microcrystalline Selenium Metal Doped

 

作者: H. W. Henkels,   J. Maczuk,  

 

期刊: Journal of Applied Physics  (AIP Available online 1954)
卷期: Volume 25, issue 1  

页码: 1-11

 

ISSN:0021-8979

 

年代: 1954

 

DOI:10.1063/1.1721489

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The thermoelectric powers and dc and 200‐mc resistivities of pure and metal‐doped selenium have been studied as functions of temperature. The properties of materials in the two important microstructures (colony and equiaxed) were distinguished. The influences of the metals Na, Cu, Ag, Mg, Zn, Cd, Hg, Ga, In, Tl, Pb, Sb, Bi, Te, Fe, Ni, Co, and Ce were noted.A working model of the selenium semiconductor was developed. In this model there is an acceptor level <0.15 ev from the full band caused by nonmetals and possibly lattice defects. In strained crystals or material in the colony structure a second acceptor level 0.27 ev from the full band is postulated from the behavior of dc and ac resistivity curves as a function of temperature. The density of the first level varies in the range 1014/cm3to 6×1016/cm3with amount of nonmetal impurity. The density of the second level depends on the crystal structure, decreasing as the colony structure recrystallizes to the equiaxed. In the specimens crystallized at 110°C the density was about 2×1016/cm3. Both metals and non‐metals are largely segregated at grain boundaries. Metals produce effective donor levels at these places.The dc properties reflect the presence of internal barriers produced by the segregation. The donor levels enhance barriers existing in the purest selenium tested increasing resistivities and thermoelectric powers.With increase in temperature >160°C the density of acceptor levels decreases as defects are removed by structural changes in the lattice.

 

点击下载:  PDF (861KB)



返 回