Growth of silicon nitride by scanned probe lithography
作者:
Jason L. Pyle,
Todd G. Ruskell,
Richard K. Workman,
Xiaowei Yao,
Dror Sarid,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1997)
卷期:
Volume 15,
issue 1
页码: 38-39
ISSN:1071-1023
年代: 1997
DOI:10.1116/1.589251
出版商: American Vacuum Society
关键词: SiN
数据来源: AIP
摘要:
Scanning probe lithography has been used for the first time to grow silicon nitride nanostructures on silicon substrates. The lithography was performed by an atomic force microscope (AFM) placed in an evacuated chamber with a partial pressure of annhydrous ammonia. The silicon nitride nanostructures were grown by negatively biasing the silicon tip with respect to the sample. By changing the environment of the AFM, both silicon oxide and silicon nitride can be grown and subsequently processed.
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