Depletion-mode m.o.s.f.e.t. model including a field-dependent surface mobility
作者:
G.Baccarani,
F.Landini,
B.Riccò,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1980)
卷期:
Volume 127,
issue 2
页码: 62-66
年代: 1980
DOI:10.1049/ip-i-1.1980.0011
出版商: IEE
数据来源: IET
摘要:
This paper presents an analytical model for depletion-mode m.o.s. transistors which is particularly suitable for c.a.d. applications, and improves the current state of the art by including the effect of the surface-mobility degradation induced by the transverse field. The model is used to fit experimental data obtained on long-channel devices, and turns out to give good results; the mean square error over the wholeID/VDSplane, for several values of the gate- and bulk-source voltages, is of the order of 1%
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