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Double quantum well resonant tunnel diodes

 

作者: D. J. Day,   Y. Chung,   C. Webb,   J. N. Eckstein,   J. M. Xu,   M. Sweeny,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 57, issue 12  

页码: 1260-1261

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103503

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak‐to‐valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.

 

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