We have modified the contact interface between Pd2Si and n-Si by ion implantation and investigated the effect of the implantation on Schottky barrier height and rate of silicide formation by electrical current-voltage measurements and Rutherford backscattering spectroscopy. Various ions, As. P, B. O and Si at 50 keV and up to a dose of 5 × 1014ions/cm2were implanted into Si wafers before the Pd-deposition to form Pd2Si. In the case of As and P, the implantation showed a large erect on the subsequent Pd2Si formation; the formation is enhanced in the as-implanted samples, but it is retarded if an annealing at 600°C precedes the Pd-deposition. Silicide formation was found generally to help reduce the implantation damage (with or without the 600°C annealing) and showed improvements on the electrical characteristics of the contact interface. Consumption of the entire implanted region by silicide formation is found necessary for obtaining a good diode performance. In the case of As implantation, a lowering of the Schottky barrier height of Pd2Si has been observed.