Scanning tunneling characterization of the atomic and electronic structure of nanometer thick carbon films grown by pulsed laser vaporization of graphite
作者:
L. Vazquez,
J. A. Martin‐Gago,
F. Comin,
S. Ferrer,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 2
页码: 566-574
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.586414
出版商: American Vacuum Society
关键词: CARBON;THIN FILMS;ELECTRONIC STRUCTURE;LATTICE PARAMETERS;CRYSTAL STRUCTURE;GRAPHITE;PHYSICAL VAPOR DEPOSITION;SCANNING TUNNELING MICROSCOPY;FILM GROWTH;IV CHARACTERISTIC;graphite
数据来源: AIP
摘要:
The authors have characterized in air, carbon films of thickness around 1 nm on Si (100) grown in ultrahigh vacuum conditions by pulsed laser vaporization of a graphite target. The substrate preparation procedure was chosen on the basis of minimizing surface roughness as viewed from scanning tunneling microscope topographic images. Atomic resolution images taken in the constant height mode revealed different atomic ordered configurations. A hexagonal structure was preferentially observed with a lattice parameter of 2.4 ű0.2 Å and extending up to 140×140 Å2. Also, a square lattice, 2.0 ű0.2 Å side, was imaged coexisting with the hexagonal one. Other structures were found which could be related with the substrate.I‐Vspectroscopy was performed in these films showing ap‐type rectifying behavior and an electronic band gap.
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