Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors
作者:
S. Y. Wang,
C. P. Lee,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 5
页码: 2680-2683
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366084
出版商: AIP
数据来源: AIP
摘要:
8–12 &mgr;m InGaAs/GaAs quantum well infrared photodetectors with two different well doping concentrations have been studied. The devices with and without surface gratings are compared for normal incident operation. It is found that the TE to TM absorption ratio depends on the doping density in the quantum wells. A higher doping density increases TE absorption. A detectivity about1×1010 cm Hz1/2/Wand a peak responsivity of 0.23 A/W at 9 &mgr;m have been obtained for the grating-free devices. ©1997 American Institute of Physics.
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