Comparison of cw laser‐annealed and electron‐beam annealed Si
作者:
Masashi Mizuta,
Neng‐Haung Sheng,
James L. Merz,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 10
页码: 6437-6440
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.328552
出版商: AIP
数据来源: AIP
摘要:
Si samples implanted with As+have been annealed with a modified commercial scanning electron microscope and with a scanning cw Ar+laser. A comparison of these two techniques is presented, using electron‐beam‐induced current as a probe of minority‐carrier effects. With a minimum of parameter optimization, it is found that electron‐beam annealing is usually superior to laser annealing with respect to both lateral and vertical uniformity.
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