Chemical etching for the evaluation of hydrogenated amorphous silicon films
作者:
T. L. Chu,
Shirley S. Chu,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 26
页码: 1783-1784
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96785
出版商: AIP
数据来源: AIP
摘要:
Chemical etching using a 1:5:40 HF‐HNO3‐CH3COOH solution has been used for the evaluation of hydrogenated amorphous silicon (a‐Si:H) films. The dissolution rate ofa‐Si@B:H films and the structural features brought out by etching have revealed significant differences in the properties ofa‐Si:H films deposited in hydrogen and helium atmospheres. Unintentionally contaminateda‐Si@B:H films have also been found to show considerably higher dissolution rate than intrinsic films, and the dissolution rate measurements may be used to optimize the deposition conditions.
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