We demonstrate high‐speed performance of InGaAs barrier‐enhanced metal‐semiconductor‐metal (M‐S‐M) Schottky barrier photodetectors monolithically integrated with double‐heterostructure InP/InGaAsP/InP waveguides. Pulse response widths of 77 ps are recorded, with an associated 3 dB power bandwidth of 1.7 GHz. Photodetectors acting as both ‘‘taps’’ of the waveguided signal and as ‘‘terminal’’ devices were fabricated. These detectors have application in receivers which are integrated with semiconductor waveguides for on‐chip optical signal processing.