Esaki diodes using theAandBor opposite {111} faces of zinc‐doped gallium antimonide were fabricated using tin—tellurium spheres. Diodes made by alloying to theBface exhibit approximately an order‐of‐magnitude higher peak tunneling current density than those made by alloying to theAface. Differences are found in the junction geometries. Junctions fabricated by alloying to theBor {1¯1¯1¯} face are generally planar and delineation of these is pronounced, suggesting enhanced impurity concentration in their recrystallized regions.Aor {111} face alloyed junctions are curved and tend to be obscurely delineated. The capitance per unit area of theBdiodes was approximately twice that of theAdiodes. ThusJp/Cvalues were typically 5–7 times higher for theBdiodes. Calculations indicate, for typicalAandBdiodes, excess carrier concentrations 4.0×1018and 1.5×1019/cm3, respectively. The higher tunneling current, the higher capacitance, and enhanced delineation of the planarBjunction are apparently the effects of higher impurity concentration in the regrowth region due to the difference of the segregation coefficient of tellurium in gallium antimonide with crystallographic direction of growth.