Lateral quantization effects in lithographically defined CdZnSe/ZnSe quantum dots and quantum wires
作者:
M. Illing,
G. Bacher,
T. Ku¨mmell,
A. Forchel,
T. G. Andersson,
D. Hommel,
B. Jobst,
G. Landwehr,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 1
页码: 124-126
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115504
出版商: AIP
数据来源: AIP
摘要:
Quantum dots and quantum wires based on CdZnSe/ZnSe single quantum well heterostructures have been achieved using electron beam lithography and wet chemical etching. Photoluminescence spectra of the dot and wire structures show a blue shift due to lateral quantization for lateral dimensions below 40 nm. For the dot ground state, a lateral confinement energy of 16 meV is obtained for 28 nm diameter structures. For wires with widths on the order of 20 nm, lateral confinement energies of about 5 meV are observed. The dot diameter and wire width dependence of the emission energies can be described based on a square well potential and the measured sizes of the structures. ©1995 American Institute of Physics.
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