High crystalline quality &ggr;‐Al2O3films were epitaxially grown on Si(111) substrates at low growth temperatures from 750 to 900 °C by Al solid source andN2Ogas molecular beam epitaxy. Very thin &ggr;‐Al2O3films grown at 850 °C showed streaky reflection high‐energy electron diffraction patterns. Byinsitux‐ray photoelectron spectroscopy measurements, carbon contamination, as is seen in the films grown withAl(CH3)3source, was not detected within the sensitivity. The stoichiometry of the growth films was found to be similar to that ofAl2O3. Growth rates of epitaxial &ggr;‐Al2O3layers were found to decrease with increasing growth temperatures. ©1995 American Institute of Physics.