Nd3+incorporation in CaF2layers grown by molecular beam epitaxy
作者:
L. E. Bausa´,
R. Legros,
A. Mun˜oz‐Yagu¨e,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 2
页码: 152-154
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106003
出版商: AIP
数据来源: AIP
摘要:
Molecular beam epitaxy of Nd3+‐doped CaF2monocrystalline layers on CaF2substrates is demonstrated. Nd concentration is controlled by the temperature of an evaporation cell containing NdF3. Photoluminescence spectra of the samples show emissions from Nd3+centers in tetragonal symmetry sites as a consequence of the charge compensation mechanism provided by interstitial F−ions.
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