Inexpensive circuit for the measurement of capture cross section of deep level defects in semiconductors
作者:
C. V. Reddy,
S. Fung,
C. D. Beling,
期刊:
Review of Scientific Instruments
(AIP Available online 1996)
卷期:
Volume 67,
issue 12
页码: 4279-4281
ISSN:0034-6748
年代: 1996
DOI:10.1063/1.1147579
出版商: AIP
数据来源: AIP
摘要:
A simple and inexpensive circuit to facilitate the direct measurement of capture cross section, when synchronized with a deep level transient spectroscopy system, is described. It avoids the most commonly encountered problem of loading and distortion of the bias (trap filling) pulses of nanosecond duration in the capture cross‐section measurement. The capacitance meter, whose internal circuitry is responsible for the distortion, is connected and disconnected from the rest of the apparatus with the help of simple and low‐cost reed relay switches featuring high operating speed and low contact resistance. Sharp bias pulses as small as 30 ns can successfully be applied to the sample with no observable distortion. Finally, a representative measurement is shown to demonstrate the simplicity and high performance of the circuit. ©1996 American Institute of Physics.
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