High‐temperature diamondp‐njunction: B‐doped homoepitaxial layer on N‐doped substrate
作者:
T. H. Borst,
S. Strobel,
O. Weis,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 18
页码: 2651-2653
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114325
出版商: AIP
数据来源: AIP
摘要:
Boron‐doped homoepitaxial layers have been selectively grown on synthetic type Ib substrates of (100) cut. Ohmic contacts were formed by evaporating a Mo/Pt/Au sandwich and subsequent annealing at 950°C for h. Current–voltage characteristics of diode type could be taken in vacuum in the temperature range 360–900 °C. Green light emission due to electroluminescence was observed from the junction area showing a maximum at a wavelength of 534 nm corresponding to a photon energy of 2.32 eV. The normalized emission spectrum was measured over the temperature range 320–440 °C with the device in air and was found independent of temperature and boron concentration. ©1995 American Institute of Physics.
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