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Electron velocity overshoot in a GaAs‐basedp‐i‐nnanostructure semiconductor observed by transient subpicosecond Raman spectroscopy

 

作者: E. D. Grann,   K. T. Tsen,   O. F. Sankey,   D. K. Ferry,   A. Salvador,   A. Botcharev,   H. Morkoc¸,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 12  

页码: 1760-1762

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.115041

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report direct measurements of nonequilibrium electron distributions and electron drift velocities in a GaAs‐basedp‐i‐nnanostructure semiconductor by using transient subpicosecond Raman spectroscopy. Experimental conditions are such that the velocity overshoot phenomenon dominates the transport properties of the photoexcited carriers. These experimental results are compared with ensemble Monte Carlo calculations. ©1995 American Institute of Physics.

 

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