Precursor-mediated adsorption of tertiarybutylarsine on GaAs (001)-(4×6)
作者:
Jie Cui,
Masashi Ozeki,
Masafumi Ohashi,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 4
页码: 502-504
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118193
出版商: AIP
数据来源: AIP
摘要:
The scattering property of tertiarybutylarsine (TBAs) on a GaAs(001)-(4×6) surface at room temperature was studied by supersonic-molecular-beam scattering. Polar angle measurements show that the scattering signal is due to thermal desorption of trapped molecules combined with a direct-inelastic scattering. The measurement of the sticking coefficient shows a precursor-mediated adsorption behavior. The time decay curve can be divided into two components with activation energies of 6.9 and 8.3 kcal/mol, revealing that TBAs molecules can physisorb into two different potential wells on the GaAs (001)-(4×6) surface. ©1997 American Institute of Physics.
点击下载:
PDF
(67KB)
返 回