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Precursor-mediated adsorption of tertiarybutylarsine on GaAs (001)-(4×6)

 

作者: Jie Cui,   Masashi Ozeki,   Masafumi Ohashi,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 70, issue 4  

页码: 502-504

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.118193

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The scattering property of tertiarybutylarsine (TBAs) on a GaAs(001)-(4×6) surface at room temperature was studied by supersonic-molecular-beam scattering. Polar angle measurements show that the scattering signal is due to thermal desorption of trapped molecules combined with a direct-inelastic scattering. The measurement of the sticking coefficient shows a precursor-mediated adsorption behavior. The time decay curve can be divided into two components with activation energies of 6.9 and 8.3 kcal/mol, revealing that TBAs molecules can physisorb into two different potential wells on the GaAs (001)-(4×6) surface. ©1997 American Institute of Physics.

 

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