Electrical measurements of boron implanted silicon on sapphire and bulk silicon
作者:
G. Alestig,
G. Holmén,
M. Mårtenson,
S. Peterström,
期刊:
Radiation Effects
(Taylor Available online 1980)
卷期:
Volume 49,
issue 1-3
页码: 7-12
ISSN:0033-7579
年代: 1980
DOI:10.1080/00337578008243058
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Hall effect and sheet resistivity measurements have been performed on boron implantations in 1μmsilicon layers on sapphire (SOS), and in bulk silicon. The doses used were 1014, 1015and 1016ions/cm2, and implantation energies were 150 and 300 keV. The samples were annealed at temperatures between 300 and 800°C. As a rule the effective number of carriers in SOS was found to be about twice the number of carriers in bulk silicon. However, the mobility is lower in bulk silicon, resulting in a sheet resistivity almost the same in boron implanted SOS and bulk silicon.
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