Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation
作者:
M. K. Weldon,
M. Collot,
Y. J. Chabal,
V. C. Venezia,
A. Agarwal,
T. E. Haynes,
D. J. Eaglesham,
S. B. Christman,
E. E. Chaban,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 25
页码: 3721-3723
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122875
出版商: AIP
数据来源: AIP
摘要:
Infrared spectroscopy and secondary ion mass spectrometry are used to elucidate the mechanism by which co-implantation of He with H facilitates the shearing of crystalline Si. By studying different implant conditions, we can separate the relative contributions of damage, internal pressure generation, and chemical passivation to the enhanced exfoliation process. We find that the He acts physically as a source of internal pressure but also in an indirectchemicalsense, leading to the reconversion of molecularH2to bound Si–H in “VH2-like” defects. We postulate that it is the formation of these hydrogenated defects at the advancing front of the expanding microcavities that enhances the exfoliation process.
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