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A refined oxidation-stripping technique of thin n-type Si films

 

作者: W. Przyborski,   J. Roed,   J. Lippert,   L. Sarholt-kristensen,  

 

期刊: Radiation Effects  （Taylor Available online 1969）
卷期: Volume 1, issue 1  

页码: 33-39

 

ISSN:0033-7579

 

年代: 1969

 

DOI:10.1080/00337576908234456

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

When energetic ions are implanted in Si-crystals an anodization-peeling technique can be used as a precise tool for the determination of the ion concentration profiles, when proper precautions are taken.

 

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