Summary Abstract: Ge deposition on Si(111)‐7×7 and Si(100)‐2×1: Effects on Si surface structure

 

作者: H.‐J. Gossmann,   L. C. Feldman,   W. M. Gibson,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 3  

页码: 407-408

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582834

 

出版商: American Vacuum Society

 

关键词: SILICON;GERMANIUM;SURFACE STRUCTURE;AUGER ELECTRON SPECTROSCOPY;ELECTRON DIFFRACTION;MOLECULAR BEAM EPITAXY;TEMPERATURE EFFECTS;INTERFACE PHENOMENA;COATINGS;Si;Ge

 

数据来源: AIP

 

 

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