We present a joint theoretical and experimental investigation of GaAs v‐groove quantum wires confined in GaAs/AlAs superlattice barriers. We have computed the electronic states for both the quantum wire and the barriers. The intrinsic bending of the superlattice layers, together with systematic spatial variations of their thickness, create localized states in the barriers that are separated from the wire. This effect has a strong impact on the overall luminescence efficiency of the wires. The results are in excellent agreement with photoluminescence and photoluminescence excitation spectra. ©1995 American Institute of Physics.