首页   按字顺浏览 期刊浏览 卷期浏览 33 ps optical switching of symmetric self‐electro‐optic effect devices
33 ps optical switching of symmetric self‐electro‐optic effect devices

 

作者: G. D. Boyd,   A. M. Fox,   D. A. B. Miller,   L. M. F. Chirovsky,   L. A. D’Asaro,   J. M. Kuo,   R. F. Kopf,   A. L. Lentine,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 57, issue 18  

页码: 1843-1845

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.104034

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report significant improvement in the optical switching times of symmetric self‐electro‐optic effect devices due to enhanced tunneling by using a 35 A˚ barrier versus the previous 60 A˚ barrier thick multiple quantum well GaAs/AlxGa(1−x)As devices. Also, the voltage required for bistability was reduced from 10 V in the thick barrier devices to 3 V in the thin barrier devices with no apparent degradation in the contrast ratio.

 

点击下载:  PDF (330KB)



返 回