Atom‐ and carrier‐depth distributions have been measured for As channeled in the ⟨110⟩ and the ⟨100⟩ directions of Si in the energy range from 20 to 800 keV by secondary ion‐mass spectrometry and differentialC‐Vtechniques. Maximum channeled ranges in the ⟨110⟩ of Si are observed up to about 6 &mgr;m. The slopespof selected range parameters plotted versus ion energyE1are measured and used to discuss the relative roles of electronic and nuclear stopping for the channeled and random components of the depth distributions. Values of electronic stoppingSeor total stopping (electronic plus nuclear)Stare calculated for ion velocityv1= 1.5×108cm/s and values are given forkandpin the expressionSe,t=kEp1for the energy range studied. The values ofpfor the maximum ranges of As channeled in the ⟨110⟩ and ⟨100⟩ directions of Si are 0.50±0.03 and 0.54±0.04, respectively. The corresponding values ofSeare 5.43×10−14and 2.18×10−13eV cm2/atom, respectively, atv1= 1.5×108cm/s.