首页   按字顺浏览 期刊浏览 卷期浏览 Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive...
Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures

 

作者: Yukio Watanabe,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 66, issue 1  

页码: 28-30

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114170

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Leakage currents in epitaxial ferroelectric/perovskite‐conductor heterostructures reproducibly show diode properties having hysteresis. The hysteresis appears in forward bias, which is positive for electron (n) type conductors and negative for hole (p) type conductors. The hysteresis is due to the increase of conductivity by the forward bias current, which exhibits the memory retention for more than an hour. The write and erase speeds of the diode and the origin of the effect are discussed. ©1995 American Institute of Physics.

 

点击下载:  PDF (71KB)



返 回