Removal of the high‐resistivity layer at thenonn+liquid phase epitaxial GaAs layer‐substrate interface by controlledinsituetch‐back
作者:
Alan C. Seabaugh,
Robert J. Mattauch,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 12
页码: 6435-6437
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327596
出版商: AIP
数据来源: AIP
摘要:
A high‐resistivity layer often forms at the gallium arsenide layer‐substrate interface following preepitaxial growth heat treatment and subsequent layer growth. Aninsituetch‐back technique was developed for use on the substrate which resulted in the removal of the high‐resistivity interfacial layer. This simple technique yielded reproducible etch‐back versus time control and thus controllable removal of the high‐resistivity layer.
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