Space‐charge‐limited currents were studied onp‐type silicon in the resistivity range from 10000–50000 &OHgr;·cm.IvsVcharacteristics showed regions where the current was proportional toV, Vn(1 <n< 2),V2,V3and to expV, depending upon the applied field strength. Hall measurements were taken over the entire current range. Due to the large lifetime, a minority carrier space charge is built up at low values of an electric field. Further increases of the applied field lead to double injection.