Deep‐level transient spectroscopy has been used to monitor the effect of carrier concentration on the properties of radiation‐induced defects in InPn+pmesa diodes grown by metalorganic chemical vapor deposition. The activation energyEafor hole emission from H4 and H5 centers and the injection‐enhanced annealing rate of H4 at 200 K have been measured as a function of carrier concentrationNAover the range ∼1×1016– 4×1017cm−3. The measured values ofEadecrease with increasingNAin a way that can be semi‐quantitatively explained by a combination of the Frenkel–Poole effect and phonon‐assisted tunneling produced by the electric field in the junction. The results suggest that hole emission from H4 and H5 centers takes place to maxima in different valence bands. The injection‐enhanced annealing rate of H4 centers increases with increasingNAat low concentrations, but approaches a maximum value nearNA∼ 1017cm−3, indicating a limiting dopant (Zn) concentration for impurity‐enhanced defect annealing.