Analysis of the hysteresis in theI‐Vcharacteristics of vertically integrated, multipeaked resonant‐tunneling diodes
作者:
Tai‐Haur Kuo,
Hung C. Lin,
Robert C. Potter,
Dave Shupe,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 5
页码: 2496-2498
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346513
出版商: AIP
数据来源: AIP
摘要:
The hysteresis (extrinsic) and current‐voltage (I‐V) characteristics of the multiwell, vertically integrated, resonant‐tunneling diode are analyzed. Our analysis shows that hysteresis in the vertically integrated diode I‐V can result from interchanging the order in which the devices switch, depending if the bias is increasing or decreasing. Experimental results are presented that support this analysis.
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