We investigate a new technique for the determination of light‐ion stopping powers in metals. The radiation‐damage‐induced resistivity change in thin films is measured as a function of ion energy. As the ion energy is raised, an increasing fraction of the energy passes through the back surface, thereby resulting in decreased damage production. This effect has been analyzed by comparison with predictions based on an Edgeworth expansion of the damage‐distribution function, using the moments tabulated by Winterbon. Results are presented for He, Li, and C irradiations of silver films with thicknesses of 2640 and 3880 A˚. The present results are compared with those of previous work. Other methods for calculation of the damage‐distribution function are compared with the Edgeworth expansion.