Enhanced carrier diffusion lengths and photon transport in AlxGa1−xAs/GaAs structures
作者:
J. L. Bradshaw,
W. J. Choyke,
R. P. Devaty,
R. L. Messham,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 3
页码: 1483-1491
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345656
出版商: AIP
数据来源: AIP
摘要:
Several novel features are observed in the low‐temperature photoluminescence spectra of AlxGa1−xAs layers grown on GaAs by metalorganic chemical vapor deposition. GaAs substrate luminescence spectra are observed through AlxGa1−xAs layers as thick as 22 &mgr;m. Both carrier diffusion to the substrate and AlxGa1−xAs luminescence are identified as the excitation mechanisms of the GaAs luminescence, and a minority‐carrier diffusion length of 10 &mgr;m is estimated. The presence of photon recycling in the AlxGa1−xAs layers is demonstrated by comparison of photoluminescence (PL) spectra for layers with and without GaAs substrates, as well as PL examination of two AlxGa1−xAs heterostructures.
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